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Study of gate dielectric permittivity variation with different equivalent oxide thickness on channel engineered deep sub-micrometer n-MOSFET device for mixed signal applications

A. Srivastava, Partha Sarkar, Chandan Kumar Sarkar. Study of gate dielectric permittivity variation with different equivalent oxide thickness on channel engineered deep sub-micrometer n-MOSFET device for mixed signal applications. Microelectronics Reliability, 49(4):365-370, 2009. [doi]

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