Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications

Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni. Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications. Microelectronics Reliability, 54(9-10):2237-2241, 2014. [doi]

Abstract

Abstract is missing.