Proton induced trapping effect on space compatible GaN HEMTs

Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni. Proton induced trapping effect on space compatible GaN HEMTs. Microelectronics Reliability, 54(9-10):2213-2216, 2014. [doi]

Abstract

Abstract is missing.