Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate

Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni. Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate. IEICE Electronic Express, 3(13):310-315, 2006. [doi]

Abstract

Abstract is missing.