High-frequency analysis of SOI lateral bipolar transistor (LBT) structure for RF analog applications

Tomislav Suligoj, Marko Koricic, Petar Biljanovic. High-frequency analysis of SOI lateral bipolar transistor (LBT) structure for RF analog applications. In Proceedings of the 2002 9th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2002, Dubrovnik, Croatia, September 15-18, 2002. pages 1191-1194, IEEE, 2002. [doi]

@inproceedings{SuligojKB02,
  title = {High-frequency analysis of SOI lateral bipolar transistor (LBT) structure for RF analog applications},
  author = {Tomislav Suligoj and Marko Koricic and Petar Biljanovic},
  year = {2002},
  doi = {10.1109/ICECS.2002.1046466},
  url = {https://doi.org/10.1109/ICECS.2002.1046466},
  researchr = {https://researchr.org/publication/SuligojKB02},
  cites = {0},
  citedby = {0},
  pages = {1191-1194},
  booktitle = {Proceedings of the 2002 9th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2002, Dubrovnik, Croatia, September 15-18, 2002},
  publisher = {IEEE},
  isbn = {0-7803-7596-3},
}