Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging

Jean-Guy Tartarin, O. Lazar, D. Saugnon, Benoit Lambert, C. Moreau, C. Bouexière, E. Romain-Latu, K. Rousseau, A. David, J. L. Roux. Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging. Microelectronics Reliability, 76:344-349, 2017. [doi]

Abstract

Abstract is missing.