A 40-nm Sub-Threshold 5T SRAM Bit Cell With Improved Read and Write Stability

Adam Teman, Anatoli Mordakhay, Janna Mezhibovsky, Alexander Fish. A 40-nm Sub-Threshold 5T SRAM Bit Cell With Improved Read and Write Stability. IEEE Trans. on Circuits and Systems, 59-II(12):873-877, 2012. [doi]

@article{TemanMMF12,
  title = {A 40-nm Sub-Threshold 5T SRAM Bit Cell With Improved Read and Write Stability},
  author = {Adam Teman and Anatoli Mordakhay and Janna Mezhibovsky and Alexander Fish},
  year = {2012},
  doi = {10.1109/TCSII.2012.2231020},
  url = {http://dx.doi.org/10.1109/TCSII.2012.2231020},
  researchr = {https://researchr.org/publication/TemanMMF12},
  cites = {0},
  citedby = {0},
  journal = {IEEE Trans. on Circuits and Systems},
  volume = {59-II},
  number = {12},
  pages = {873-877},
}