ALD oxides for GaN interfaces: a comparative view on the flat band

R. Tomasiunas, I. Reklaitis, E. Radiunas, G. Juska, R. Ritasalo, T. Pilvi, M. Mandl, S. Taeger, M. Strassburg. ALD oxides for GaN interfaces: a comparative view on the flat band. In 21st International Conference on Transparent Optical Networks, ICTON 2019, Angers, France, July 9-13, 2019. pages 1-4, IEEE, 2019. [doi]

Abstract

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