On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations

B. Traore, Elisa Vianello, Gabriel Molas, M. Gely, J.-F. Nodin, E. Jalaguier, P. Blaise, B. De Salvo, L. R. C. Fonseca, K.-H. Xue, Y. Nishi. On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 170-173, IEEE, 2013. [doi]

Abstract

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