A Single-Ended Disturb-Free 9T Subthreshold SRAM With Cross-Point Data-Aware Write Word-Line Structure, Negative Bit-Line, and Adaptive Read Operation Timing Tracing - researchr publication

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Ming-Hsien Tu, Jihi-Yu Lin, Ming-Chien Tsai, Chien-Yu Lu, Yuh-Jiun Lin, Meng-Hsueh Wang, Huan-Shun Huang, Kuen-Di Lee, Wei-Chiang Shih, Shyh-Jye Jou, Ching-Te Chuang. A Single-Ended Disturb-Free 9T Subthreshold SRAM With Cross-Point Data-Aware Write Word-Line Structure, Negative Bit-Line, and Adaptive Read Operation Timing Tracing. J. Solid-State Circuits, 47(6):1469-1482, 2012. [doi]

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