An analytical approach for physical modeling of hot-carrier induced degradation

Stanislav Tyaginov, Ivan Starkov, Hubert Enichlmair, C. Jungemann, Jong Mun Park, E. Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser. An analytical approach for physical modeling of hot-carrier induced degradation. Microelectronics Reliability, 51(9-11):1525-1529, 2011. [doi]

Abstract

Abstract is missing.