The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices - researchr publication authors

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Abhitosh Vais, Koen Martens, J. Franco, D. Lin, A. Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken, Kristin De Meyer. The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 5, IEEE, 2015. [doi]

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