Reliability of Ferroelectric and Antiferroelectric Si: HfO2 materials in 3D capacitors by TDDB studies - researchr publication authors

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A. Viegas, K. Falidas, T. Ali, Kati Kühnel, R. Hoffmann, Clemens Mart, M. Czernohorsky, J. Heitmann. Reliability of Ferroelectric and Antiferroelectric Si: HfO2 materials in 3D capacitors by TDDB studies. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 47-1, IEEE, 2022. [doi]

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