2-FET used as 1-transistor high-speed DRAM

Jing Wan, Cyrille Le Royer, Alexander Zaslavsky, Sorin Cristoloveanu. 2-FET used as 1-transistor high-speed DRAM. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 197-200, IEEE, 2012. [doi]

@inproceedings{WanRZC12,
  title = {2-FET used as 1-transistor high-speed DRAM},
  author = {Jing Wan and Cyrille Le Royer and Alexander Zaslavsky and Sorin Cristoloveanu},
  year = {2012},
  doi = {10.1109/ESSDERC.2012.6343367},
  url = {http://dx.doi.org/10.1109/ESSDERC.2012.6343367},
  researchr = {https://researchr.org/publication/WanRZC12},
  cites = {0},
  citedby = {0},
  pages = {197-200},
  booktitle = {Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012},
  publisher = {IEEE},
  isbn = {978-1-4673-1707-8},
}