2-FET used as 1-transistor high-speed DRAM

Jing Wan, Cyrille Le Royer, Alexander Zaslavsky, Sorin Cristoloveanu. 2-FET used as 1-transistor high-speed DRAM. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 197-200, IEEE, 2012. [doi]

No reviews for this publication, yet.