Corrigendum to "A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors" [Microelectron. Reliab. 60 (2016) 67-69]

Weiliang Wang, Karim Khan, Xingye Zhang, Haiming Qin, Jun Jiang, Lijing Miao, Kemin Jiang, Pengjun Wang, Mingzhi Dai, Junhao Chu. Corrigendum to "A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors" [Microelectron. Reliab. 60 (2016) 67-69]. Microelectronics Reliability, 67:159, 2016. [doi]

Abstract

Abstract is missing.