A 0.4 µg Bias Instability and 1.2 µg Hz Noise Floor MEMS Silicon Oscillating Accelerometer With CMOS Readout Circuit - researchr publication

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Xi Wang, Jian Zhao, Yang Zhao, Guo Ming Xia, An Ping Qiu, Yan Su, Yong Ping Xu. A 0.4 µg Bias Instability and 1.2 µg Hz Noise Floor MEMS Silicon Oscillating Accelerometer With CMOS Readout Circuit. J. Solid-State Circuits, 52(2):472-482, 2017. [doi]

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