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Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories

Changbeom Woo, Shinkeun Kim, Jaeyeol Park, Hyungcheol Shin, HaeSoo Kim, Gil-Bok Choi, Moon-Sik Seo, Keum Hwan Noh. Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-6, IEEE, 2020. [doi]

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