Effects of single vacancy defects on 1/f noise in grapbene/b-BN FETs

Ting Wu, Abdullah Alharbi, Takashi Taniguchi, Kenji Watanabe, Davood Shahricrdi. Effects of single vacancy defects on 1/f noise in grapbene/b-BN FETs. In 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. pages 1-2, IEEE, 2018. [doi]

Abstract

Abstract is missing.