Analytical Modeling of the Silicon Carbide (SiC) MOSFET during Switching Transition for EMI Investigation

Yingzhe Wu, Hui Li, Wenjie Ma, Dingxin Jin. Analytical Modeling of the Silicon Carbide (SiC) MOSFET during Switching Transition for EMI Investigation. IEICE Transactions, 102-C(9):646-657, 2019. [doi]

Abstract

Abstract is missing.