Influence of ISSG tunnel oxide with decoupled plasma nitridation on erase characteristic of NOR-type floating-gate flash memories

Yue Xu, Yang Huang. Influence of ISSG tunnel oxide with decoupled plasma nitridation on erase characteristic of NOR-type floating-gate flash memories. Microelectronics Reliability, 55(7):1126-1129, 2015. [doi]

Abstract

Abstract is missing.