A 31.3-dBm Bulk CMOS T/R Switch Using Stacked Transistors With Sub-Design-Rule Channel Length in Floated p-Wells

Haifeng Xu, Kenneth K. O. A 31.3-dBm Bulk CMOS T/R Switch Using Stacked Transistors With Sub-Design-Rule Channel Length in Floated p-Wells. J. Solid-State Circuits, 42(11):2528-2534, 2007. [doi]

Abstract

Abstract is missing.