Single Bit-Line 7T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Performance and Energy in 14 nm FinFET Technology

Younghwi Yang, Hanwool Jeong, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung. Single Bit-Line 7T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Performance and Energy in 14 nm FinFET Technology. IEEE Trans. on Circuits and Systems, 63-I(7):1023-1032, 2016. [doi]

Abstract

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