Numerical investigation of characteristics of p-channel Ge/Si hetero-nanocrystal memory

H. G. Yang, Y. Shi, L. Pu, S. L. Gu, B. Shen, P. Han, R. Zhang, Y. D. Zhang. Numerical investigation of characteristics of p-channel Ge/Si hetero-nanocrystal memory. Microelectronics Journal, 34(1):71-75, 2003. [doi]

Abstract

Abstract is missing.