DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures

Hanbin Ying, Jeffrey W. Teng, George N. Tzintzarov, Anup P. Omprakash, Sunil G. Rao, Uppili Raghunathan, Adrian Ildefonso, Martin S. Fernandez, John D. Cressler. DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures. In 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019. pages 1-4, IEEE, 2019. [doi]

Abstract

Abstract is missing.