40nm Ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU

Yoshisato Yokoyama, Yuichiro Ishii, Hidemitsu Kojima, Atsushi Miyanishi, Yoshiki Tsujihashi, Shinobu Asayama, Kazutoshi Shiba, Koji Tanaka, Tatsuya Fukuda, Koji Nii, Kazumasa Yanagisawa. 40nm Ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU. In Fifteenth International Symposium on Quality Electronic Design, ISQED 2014, Santa Clara, CA, USA, March 3-5, 2014. pages 24-31, IEEE, 2014. [doi]

Abstract

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