2 Ultra High Density SRAM Macro using 7nm FinFET Technology with Dual-Edge Driven Wordline/Bitline and Write/Read-Assist Circuit

Yoshisato Yokoyama, Miki Tanaka, Koji Tanaka, Masao Morimoto, Makoto Yabuuchi, Yuichiro Ishii, Shinji Tanaka. 2 Ultra High Density SRAM Macro using 7nm FinFET Technology with Dual-Edge Driven Wordline/Bitline and Write/Read-Assist Circuit. In IEEE Symposium on VLSI Circuits, VLSI Circuits 2020, Honolulu, HI, USA, June 16-19, 2020. pages 1-2, IEEE, 2020. [doi]

Abstract

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