A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface

Jong Yuh, Jason Li 0001, Heguang Li, Yoshihiro Oyama, Cynthia Hsu, Pradeep Anantula, Stanley Jeong, Anirudh Amarnath, Siddhesh Darne, Sneha Bhatia, Tianyu Tang, Aditya Arya, Naman Rastogi, Naoki Ookuma, Hiroyuki Mizukoshi, Alex Yap, Demin Wang, Steve Kim, Yonggang Wu, Min Peng, Jason Lu, Tommy Ip, Seema Malhotra, David Han, Masatoshi Okumura, Jiwen Liu, John Sohn, Hardwell Chibvongodze, Muralikrishna Balaga, Aki Matsuda, Chakshu Puri, Chen Chen, Indra K. V, Chaitanya G, Venky Ramachandra, Yosuke Kato, Ravi Kumar, Huijuan Wang, Farookh Moogat, In-Soo Yoon, Kazushige Kanda, Takahiro Shimizu, Noboru Shibata, Takashi Shigeoka, Kosuke Yanagidaira, Takuyo Kodama, Ryo Fukuda, Yasuhiro Hirashima, Mitsuhiro Abe. A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface. In IEEE International Solid-State Circuits Conference, ISSCC 2022, San Francisco, CA, USA, February 20-26, 2022. pages 130-132, IEEE, 2022. [doi]

@inproceedings{Yuh0LOHAJADBTAR22,
  title = {A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface},
  author = {Jong Yuh and Jason Li 0001 and Heguang Li and Yoshihiro Oyama and Cynthia Hsu and Pradeep Anantula and Stanley Jeong and Anirudh Amarnath and Siddhesh Darne and Sneha Bhatia and Tianyu Tang and Aditya Arya and Naman Rastogi and Naoki Ookuma and Hiroyuki Mizukoshi and Alex Yap and Demin Wang and Steve Kim and Yonggang Wu and Min Peng and Jason Lu and Tommy Ip and Seema Malhotra and David Han and Masatoshi Okumura and Jiwen Liu and John Sohn and Hardwell Chibvongodze and Muralikrishna Balaga and Aki Matsuda and Chakshu Puri and Chen Chen and Indra K. V and Chaitanya G and Venky Ramachandra and Yosuke Kato and Ravi Kumar and Huijuan Wang and Farookh Moogat and In-Soo Yoon and Kazushige Kanda and Takahiro Shimizu and Noboru Shibata and Takashi Shigeoka and Kosuke Yanagidaira and Takuyo Kodama and Ryo Fukuda and Yasuhiro Hirashima and Mitsuhiro Abe},
  year = {2022},
  doi = {10.1109/ISSCC42614.2022.9731110},
  url = {https://doi.org/10.1109/ISSCC42614.2022.9731110},
  researchr = {https://researchr.org/publication/Yuh0LOHAJADBTAR22},
  cites = {0},
  citedby = {0},
  pages = {130-132},
  booktitle = {IEEE International Solid-State Circuits Conference, ISSCC 2022, San Francisco, CA, USA, February 20-26, 2022},
  publisher = {IEEE},
  isbn = {978-1-6654-2800-2},
}