A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface - researchr publication related

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Jong Yuh, Jason Li 0001, Heguang Li, Yoshihiro Oyama, Cynthia Hsu, Pradeep Anantula, Stanley Jeong, Anirudh Amarnath, Siddhesh Darne, Sneha Bhatia, Tianyu Tang, Aditya Arya, Naman Rastogi, Naoki Ookuma, Hiroyuki Mizukoshi, Alex Yap, Demin Wang, Steve Kim, Yonggang Wu, Min Peng, Jason Lu, Tommy Ip, Seema Malhotra, David Han, Masatoshi Okumura, Jiwen Liu, John Sohn, Hardwell Chibvongodze, Muralikrishna Balaga, Aki Matsuda, Chakshu Puri, Chen Chen, Indra K. V, Chaitanya G, Venky Ramachandra, Yosuke Kato, Ravi Kumar, Huijuan Wang, Farookh Moogat, In-Soo Yoon, Kazushige Kanda, Takahiro Shimizu, Noboru Shibata, Takashi Shigeoka, Kosuke Yanagidaira, Takuyo Kodama, Ryo Fukuda, Yasuhiro Hirashima, Mitsuhiro Abe. A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface. In IEEE International Solid-State Circuits Conference, ISSCC 2022, San Francisco, CA, USA, February 20-26, 2022. pages 130-132, IEEE, 2022. [doi]

The following publications are possibly variants of this publication:

A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO InterfaceJonghak Yuh, Yen-Lung Jason Li, Heguang Li, Yoshihiro Oyama, Cynthia Hsu, Pradeep Anantula, Gwang Yeong Stanley Jeong, Anirudh Amarnath, Siddhesh Darne, Sneha Bhatia, Tianyu Tang, Aditya Arya, Naman Rastogi, Naoki Ookuma, Hiroyuki Mizukoshi, Alex Yap, Demin Wang, Steve Kim, Yonggang Wu, Min Peng, Jason Lu, Tommy Ip, Seema Malhotra, Taekeun Han, Masatoshi Okumura, Jiwen Liu, Jeongduk John Sohn, Hardwell Chibvongodze, Muralikrishna Balaga, Akihiro Matsuda, Chen Chen, Indra K. V, V. S. N. K. Chaitanya G., Venky Ramachandra, Yosuke Kato, Ravi Kumar, Huijuan Wang, Farookh Moogat, In-Soo Yoon, Kazushige Kanda, Takahiro Shimizu, Noboru Shibata, Kosuke Yanagidaira, Takuyo Kodama, Ryo Fukuda, Yasuhiro Hirashima, Mitsuhiro Abe. jssc, 58(1):316-328, 2023. [doi]

A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOSCuong Trinh, Noboru Shibata, Takeshi Nakano, Mikio Ogawa, Jumpei Sato, Yoshikazu Takeyama, Katsuaki Isobe, Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei, Kiyoaki Iwasa, J. Nakai, Takahiro Shimizu, Mitsuaki Honma, Shintaro Sakai, Toshimasa Kawaai, Satoru Hoshi, Jonghak Yuh, Cynthia Hsu, Taiyuan Tseng, Jason Li, Jayson Hu, M. Liu, Shahzad Khalid, J. Chen, Mitsuyuki Watanabe, Hung-Szu Lin, Junhui Yang, K. McKay, Khanh Nguyen, Tuan Pham, Y. Matsuda, K. Nakamura, K. Kanebako, S. Yoshikawa, W. Igarashi, A. Inoue, T. Takahashi, Y. Komatsu, C. Suzuki, K. Kanazawa, Masaaki Higashitani, Seungpil Lee, T. Murai, K. Nguyen, James Lan, Sharon Huynh, M. Murin, M. Shlick, M. Lasser, Raul Cernea, Mehrdad Mofidi, K. Schuegraf, Khandker Quader. isscc 2009: 246-247 [doi]

A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOSCuong Trinh, Noboru Shibata, Takeshi Nakano, Mikio Ogawa, Jumpei Sato, Yoshikazu Takeyama, Katsuaki Isobe, Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei, Kiyoaki Iwasa, J. Nakai, Takahiro Shimizu, Mitsuaki Honma, Shintaro Sakai, Toshimasa Kawaai, Satoru Hoshi, Jonghak Yuh, Cynthia Hsu, Taiyuan Tseng, Jason Li, Jayson Hu, M. Liu, Shahzad Khalid, J. Chen, Mitsuyuki Watanabe, Hung-Szu Lin, Junhui Yang, K. McKay, Khanh Nguyen, Tuan Pham, Y. Matsuda, K. Nakamura, K. Kanebako, S. Yoshikawa, W. Igarashi, A. Inoue, T. Takahashi, Y. Komatsu, C. Suzuki, K. Kanazawa, Masaaki Higashitani, Seungpil Lee, T. Murai, K. Nguyen, James Lan, Sharon Huynh, M. Murin, M. Shlick, M. Lasser, Raul Cernea, Mehrdad Mofidi, K. Schuegraf, Khandker Quader. isscc 2009: 246-247 [doi]

A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 DensityWanik Cho, Jongseok Jung, Jongwoo Kim, Junghoon Nam, Sangkyu Lee, Yujong Noh, Dauni Kim, Wanseob Lee, Kayoung Cho, Kwanho Kim, Heejoo Lee, Sooyeol Chai, Eunwoo Jo, Hanna Cho, Jong-Seok Kim, Chankeun Kwon, Cheolioona Park, Hveonsu Nam, Haeun Won, Taeho Kim, Kyeonghwan Park, Sanghoon Oh, Jinhyun Ban, Junyoung Park, Jae-Hyeon Shin, Taisik Shin, Junseo Jang, Jiseong Mun, Jehyun Choi, Hyunseung Choi, Sung-Wook Choi, Wonsun Park, Dongkvu Yoon, Minsu Kim, Junyoun Lim, Chiwook An, Hyunyoung Shirr, Haesoon Oh, Haechan Park, Sungbo Shim, Hwang Huh, Honasok Choi, Seungpil Lee, Jaesuna Sim, Kichan Gwon, Jumsoo Kim, Woopyo Jeong, Jungdal Choi, Kyowon Jin. isscc 2022: 134-135 [doi]

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO RateDoo-Hyun Kim, Hyunggon Kim, Sung-Won Yun, Youngsun Song, Jisu Kim, Sung-Min Joe, Kyung-hwa Kang, Joonsuc Jang, Hyun-Jun Yoon, Kangbin Lee, Minseok Kim, Joonsoo Kwon, Jonghoo Jo, Sehwan Park, Jiyoon Park, Jisoo Cho, Sohyun Park, Garam Kim, Jinbae Bang, Heejin Kim, JongEun Park, Deokwoo Lee, Seonyong Lee, Hwajun Jang, Hanjun Lee, DongHyun Shin, Jungmin Park, Jungkwan Kim, Jongmin Kim, Kichang Jang, II Han Park, Seuna Hyun Moon, Myung-Hoon Choi, Pansuk Kwak, Joo-Yong Park, Youngdon Choi, Sanglok Kim, Seungjae Lee, Dongku Kang, Jeong-Don Lim, Dae-Seok Byeon, Ki-Whan Song, Jung Hwan Choi, Sangjoon Hwang, Jaeheon Jeong. isscc 2020: 218-220 [doi]

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