245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-and 4-way Power Combining

Byeonghun Yun, Dae-Woong Park, Kyung-Sik Choi, Ho-Jin Song, Sang-Gug Lee. 245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-and 4-way Power Combining. In IEEE Asian Solid-State Circuits Conference, A-SSCC 2021, Busan, Korea, Republic of, November 7-10, 2021. pages 1-3, IEEE, 2021. [doi]

Abstract

Abstract is missing.