A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts

Xingui Zhang, Hua Xin Guo, Xiao Gong, Yee-Chia Yeo. A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 177-180, IEEE, 2012. [doi]

Abstract

Abstract is missing.