300-V class power n-channel LDMOS transistor implemented in 0.18-μm silicon-on-insulator (SOI) technology

Shuai Zhang, Hsiao-Chin Tuan, Xiaojing Wu, Lei Shi, Jian Wu. 300-V class power n-channel LDMOS transistor implemented in 0.18-μm silicon-on-insulator (SOI) technology. Microelectronics Reliability, 61:125-128, 2016. [doi]

Abstract

Abstract is missing.