Influence of fin number on hot-carrier injection stress induced degradation in bulk FinFETs

Wenqi Zhang, Tzuo-Li Wang, Yan-hua Huang, Tsu-Ting Cheng, Shih-Yao Chen, Yi-Ying Li, Chun-Hsiang Hsu, Chih-Jui Lai, Wen-Kuan Yeh, Yi-lin Yang. Influence of fin number on hot-carrier injection stress induced degradation in bulk FinFETs. Microelectronics Reliability, 67:89-93, 2016. [doi]

Abstract

Abstract is missing.