A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology

Dixian Zhao, Yongran Yi. A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology. Wireless Communications and Mobile Computing, 2018, 2018. [doi]

Authors

Dixian Zhao

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Yongran Yi

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