Dixian Zhao, Yongran Yi. A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology. Wireless Communications and Mobile Computing, 2018, 2018. [doi]
@article{ZhaoY18-2,
title = {A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology},
author = {Dixian Zhao and Yongran Yi},
year = {2018},
doi = {10.1155/2018/8234615},
url = {https://doi.org/10.1155/2018/8234615},
researchr = {https://researchr.org/publication/ZhaoY18-2},
cites = {0},
citedby = {0},
journal = {Wireless Communications and Mobile Computing},
volume = {2018},
}