Yunlong Zheng, Ruofan Dai, Zhuojun Chen, Shulong Sun, Zheng Wang, Zehua Sang, Min Lin, Shichang Zou. Comparison of single-event transients of T-gate core and IO device in 130 nm partially depleted silicon-on-insulator technology. IEICE Electronic Express, 13(12):20160424, 2016. [doi]
@article{ZhengDCSWSLZ16,
title = {Comparison of single-event transients of T-gate core and IO device in 130 nm partially depleted silicon-on-insulator technology},
author = {Yunlong Zheng and Ruofan Dai and Zhuojun Chen and Shulong Sun and Zheng Wang and Zehua Sang and Min Lin and Shichang Zou},
year = {2016},
doi = {10.1587/elex.13.20160424},
url = {http://dx.doi.org/10.1587/elex.13.20160424},
researchr = {https://researchr.org/publication/ZhengDCSWSLZ16},
cites = {0},
citedby = {0},
journal = {IEICE Electronic Express},
volume = {13},
number = {12},
pages = {20160424},
}