Yunlong Zheng, Ruofan Dai, Zhuojun Chen, Shulong Sun, Zheng Wang, Zehua Sang, Min Lin, Shichang Zou. Comparison of single-event transients of T-gate core and IO device in 130 nm partially depleted silicon-on-insulator technology. IEICE Electronic Express, 13(12):20160424, 2016. [doi]
@article{ZhengDCSWSLZ16, title = {Comparison of single-event transients of T-gate core and IO device in 130 nm partially depleted silicon-on-insulator technology}, author = {Yunlong Zheng and Ruofan Dai and Zhuojun Chen and Shulong Sun and Zheng Wang and Zehua Sang and Min Lin and Shichang Zou}, year = {2016}, doi = {10.1587/elex.13.20160424}, url = {http://dx.doi.org/10.1587/elex.13.20160424}, researchr = {https://researchr.org/publication/ZhengDCSWSLZ16}, cites = {0}, citedby = {0}, journal = {IEICE Electronic Express}, volume = {13}, number = {12}, pages = {20160424}, }