Effect of deposition methods on dielectric breakdown strength of PECVD low-k carbon doped silicon dioxide dielectric thin films

H. Zhou, F. G. Shi, B. Zhao, J. Yota. Effect of deposition methods on dielectric breakdown strength of PECVD low-k carbon doped silicon dioxide dielectric thin films. Microelectronics Journal, 35(7):571-576, 2004. [doi]

Abstract

Abstract is missing.