NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor

Huimei Zhou, Miaomiao Wang, Jingyun Zhang, Koji Watanabe, Curtis Durfee, Shogo Mochizuki, Ruqiang Bao, Richard G. Southwick, Maruf Bhuiyan, Basker Veeraraghavan. NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-6, IEEE, 2020. [doi]

Abstract

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