Impact Ionization Model for S-NDR based Threshold Switching Devices

Yuezhang Zou, Darshil K. Gala, James A. Bain. Impact Ionization Model for S-NDR based Threshold Switching Devices. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 107-108, IEEE, 2019. [doi]

Abstract

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