Table of Contents

• Advanced mm-Wave Power Electronics (Invited Talk)Young-Kai Chen, Tsu-Hsi Chang, Abirami Sivananthan. 1-4 [doi]
• A 48-79 GHz Low-Noise Amplifier with Broadband Phase-Invariant Gain Control in 45nm SOI CMOSWooram Lee. 1-4 [doi]
• Virtual-Source Modeling of N-polar GaN MISHEMTSRohit R. Karnaty, Umesh K. Mishra, James F. Buckwalter, Matthew Guidry, Pawana Shrestha, Brian Romanczyk, Nirupam Hatui, Xun Zheng, Christian Wurm, Haoran Li, Stacia Keller. 1-4 [doi]
• Load pull measurement techniques: architecture, accuracy, and applicationsMauro Marchetti, Gustavo Avolio, Michele Squillante, Ajay K. Doggalli. 1-6 [doi]
• Graded-Channel GaN-Based HEMTs for High Linearity Amplifiers at Millimeter-WaveNivedhita Venkatesan, Gerardo Silva-Oelker, Patrick Fay. 1-4 [doi]
• A High Efficiency, Ka-Band, GaN-on-SiC MMIC with Low CompressionBruce Schmukler, Jeffrey Barner, Jeremy Fisher, Donald A. Gajewski, Scott T. Sheppard, Jim W. Milligan, Kyle M. Bothe, Satyaki Ganguly, Terry Alcorn, Jennifer Gao, Chris Hardiman, Evan Jones, Dan Namishia, Fabian Radulescu. 1-4 [doi]
• Implementation of InGaAs-OI Passive Devices and Its Application to 5G Millimeter-Wave Phase ShifterPilsoon Choi, Annie Kumar, Sachin Yadav, Xiao Gong, Dimitri A. Antoniadis, Eugene A. Fitzgerald. 1-4 [doi]
• Characterization of the Self-Enhanced Class J PA Operating Mode in LDMOS and GaN TransistorsFrederik Vanaverbeke, Michael Satinu, Kevin Kim. 1-7 [doi]
• Design Considerations for Behavioral Modeling and Pre-Distortion of Wide Bandwidth Wireless SystemsKevin Chuang. 1-6 [doi]
• Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junctionDong Liu, John Papapolymerou, Parsian K. Mohseni, Michael Becker 0014, Jung-Hun Seo, John D. Albrecht, Timothy A. Grotjohn, Zhenqiang Ma, Sang Jung Cho, Aaron Hardy, Jisoo Kim, Cristian J. Herrera-Rodriguez, Edward Swinnich, Mohadeseh A. Baboli, Jiarui Gong, Xenofon Konstantinou. 1-4 [doi]
• Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-BreakdownRafael Perez Martinez, Uppili S. Raghunathan, Brian R. Wier, Harrison P. Lee, John D. Cressler. 1-4 [doi]
• Millimeter-Wave CMOS Phased-Array Transceiver Toward 1Tbps Wireless CommunicationKenichi Okada. 1-6 [doi]
• Development of SiGeSn Technique towards Integrated Mid-Infrared Photonics ApplicationsShui-Qing Yu, Yiyin Zhou, Huong Tran, Baohua Li, Seyed Ghetmiri, Aboozar Mosleh, Mansour Mortazavi, Wei Du, Greg Sun, Richard A. Soref, Joe Margetis, John Tolle. 1-5 [doi]
• A 16-dBm D-Band Power Amplifier with a Cascaded CE and CB Output Power Stage Using a Stub Matching TopologyBadou Sene, Herbert Knapp, Hao Li, Jonas Kammerer, Soran Majied, Klaus Aufinger, Jonas Fritzin, Daniel Reiter, Nils Pohl. 1-4 [doi]
• 50 - 250 GHz High-Gain Power Amplifier MMICs in 250-nm InP HBTZach Griffith, Miguel Urteaga, Petra Rowell, Lan Tran, Bobby Brar. 1-6 [doi]
• D-band Transceiver Utilizing 70-nm GaAs-mHEMT Technology for FDD SystemMasaharu Ito, Takashi Okawa, Tsunehisa Marumoto. 1-4 [doi]
• High-Performance InGaAs-on-Silicon Technology Platform For Logic and RF ApplicationsCezar B. Zota, Clarissa Convertino, Marilyne Sousa, Daniele Caimi, Kirsten E. Moselund, Lukas Czornomaz. 1-6 [doi]
• Diamond Superjunction (SJ) Process Development: Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES)S. Afroz, V. Wheeler, Marko J. Tadjer, J. Gallagher, G. Foster, Karl D. Hobart, B. Novak, K. Nagamatsu, K. Frey, P. Shea, R. Howell, J. Chang, Andrew D. Koehler, T. Feygelson. 1-4 [doi]
• Coherent Transceiver for High Speed Optical Communications: Opportunities and ChallengesSebastien Blais, Yuriy M. Greshishchev, Peter Schvan, Ian Betty, Douglas McGhan. 1-6 [doi]
• 82 GHz direct up-converter mixer using double-balanced Gilbert cell with sensitivity analysis at mm-wave frequencyAhmed Omar 0003, Anindya Mukherjee, Wenfeng Liang, Yaxin Zhang, P. Sakalas, Michael Schröter. 1-4 [doi]
• A Scalable Multimode 24-GHz Radar Transceiver for Industrial and Consumer Applications in a 0.13µm SiGe BiCMOS TechnologyAbhiram Chakraborty, Mohamed Hamouda, Yijue Chen, Claus Lautenschlager, Daniel Englisch, Muhammad Qureshi, Ngoc-Hoa Huynh, Klaus Hoenninger, Hans-Peter Forstner. 1-4 [doi]
• 140GHz SiGe HBT and 100GHz InP DHBT Broadband Triple-Stacked Distributed Amplifiers with Active Bias TerminationsKevin W. Kobayashi, Ying Z. McCleary. 1-4 [doi]
• Ultra-fast Thermoreflectance Imaging for Electronic, Optoelectronic, and Thermal DevicesJe-Hyeong Bahk, Ali Shakouri. 1-7 [doi]
• Quiescent Drain Voltage Dependence of Pulsed I-V Characteristics of GaN HEMTs: Analysis and ModelingSourabh Khandelwal, Kevin Kellogg, Cole Hill, Hugo Morales, Larry Dunleavy, Gergana Drandova, Anita Pacheco, Jose Jimenez. 1-4 [doi]
• A 17 GHz All-npn Push-Pull Class-C VCOSimone Veni, Michele Caruso, Marc Tiebout, Andrea Bevilacqua. 1-4 [doi]
• A Broadband Reflection-Type Phase Shifter Achieving Uniform Phase and Amplitude Response across 27 to 31 GHzYuan Chang, Brian A. Floyd. 1-4 [doi]
• RF Front End Module Architectures for 5GFlorinel Balteanu. 1-8 [doi]
• InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHzW. Quan, A. M. Arabhavi, D. Marti, Sara Hamzeloui, Olivier Ostinelli, Colombo R. Bolognesi. 1-4 [doi]
• Collector-substrate modeling of SiGe HBTs up to THz rangeBishwadeep Saha, Sébastien Frégonese, Soumya Ranjan Panda, Anjan Chakravorty, Didier Céli, Thomas Zimmer. 1-4 [doi]
• A Ka-Band CW 15.5W 15.6% Fractional Bandwidth GaN Power Amplifier MMIC Using Wideband BPF Inter-stage Matching NetworkKeigo Nakatani, Yutaro Yamaguchi 0002, Masatake Hangai, Shintaro Shinjo. 1-4 [doi]
• A THz Pulse Radiator Based on PIN Diode Reverse RecoverySam Razavian, Aydin Babakhani. 1-4 [doi]
• Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN SubstratesYusuke Kumazaki, Keiji Watanabe, Toshihiro Ohki, Junji Kotani, Shiro Ozaki, Yoshitaka Niida, Kozo Makiyama, Yuichi Minoura, Naoya Okamoto, Norikazu Nakamura. 1-4 [doi]
• A Compact Ka-Band Transformer-Coupled Power Amplifier for 5G in 0.15um GaAsValdrin Qunaj, Patrick Reynaert. 1-4 [doi]
• Scalable Small-Signal Modeling of AlGaN/GaN HEMT Based on Distributed Gate ResistanceBilal Hassan, Adrien Cutivet, Christophe Rodriguez, Flavien Cozette, Ali Soltani, Hassan Maher, François Boone. 1-4 [doi]
• A 2-20 GHz SiGe Amplitude Control Circuit with Differential Signal Selectivity for Wideband Reconfigurable ElectronicsMoon-Kyu Cho, Ickhyun Song, Nelson E. Lourenco, Adilson S. Cardoso, Christopher T. Coen, Douglas R. Denison, John D. Cressler. 1-4 [doi]
• Active Single-Ended to Differential Converter (Balun) for DC up to 70 GHz in 130 nm SiGePaul Stärke, Vincent Rieß, Corrado Carta, Frank Ellinger. 1-4 [doi]
• A 110-GHz-Bandwidth 2: 1 AMUX-Driver using 250-nm InP DHBTs for Beyond-1-Tb/s/carrier Optical Transmission SystemsMunehiko Nagatani, Yutaka Miyamoto, Hideyuki Nosaka, Hitoshi Wakita, Yoshihiro Ogiso, Hiroshi Yamazaki, Miwa Mutoh, Minoru Ida, Fukutaro Hamaoka, Masanori Nakamura, Takayuki Kobayashi. 1-4 [doi]
• Ballast Resistor Temperature Effect and RuggednessYves Ngu, Ephrem G. Gebreselasie, Rajendran Krishnasamy, Rick Rassel. 1-4 [doi]
• 300-GHz 120-Gb/s Wireless Transceiver with High-Output-Power and High-Gain Power Amplifier Based on 80-nm InP-HEMT TechnologyHiroshi Hamada, Takuya Tsutsumi, Go Itami, Hiroki Sugiyama, Hideaki Matsuzaki, Kenichi Okada, Hideyuki Nosaka. 1-4 [doi]
• A 19.5 dBm Power Amplifier with Highly Accurate 8-bit Power Controlling for Automotive Radar Applications in a 28 nm CMOS TechnologyDaniel Reiter, Hao Li, Herbert Knapp, Jonas Kammerer, Jonas Fritzin, Soran Majied, Badou Sene, Nils Pohl. 1-4 [doi]
• Highly Efficient Ka-band (33 GHz - 36 GHz) GaN MMIC Power Amplifier with >58.5% PAEM. Micovic, D. Regan, J. Wong, J. Tai, H. Sharifi. 1-3 [doi]
• Distortion Analysis of CE and CB SiGe HBT Power-Cells with fmax beyond 220 GHz for Millimeter-Wave ApplicationsPaulius Sakalas, A. Mukherjee, Michael Schröter. 1-4 [doi]
• Second Generation SLCFET Amplifier: Improved FT/FMAX and Noise PerformanceKen A. Nagamatsu, Shamima Afroz, Shalini Gupta, Sam Wanis, Jeffrey Hartman, Eric J. Stewart, Patrick Shea, Karen Renaldo, Robert S. Howell, Brian Novak, Annaliese Drechsler, Josephine Chang, Dale Dawson, Ron Freitag, Kevin Frey, Monique Farrell, Georges Siddiqi. 1-4 [doi]
• Comparison of 10/20/40 GHz Quadrature VCOs for W-band FMCW Radar Systems in 90nm SiGe BiCMOS TechnologyWeihu Wang, Brian A. Floyd. 1-4 [doi]
• A Highly Integrated D-Band Multi-Channel Transceiver Chip for Radar ApplicationsVadim Issakov, Andrea Bilato, Vera Kurz, Daniel Englisch, Angelika Geiselbrechtinger. 1-4 [doi]
• New GaInAs/InAs/InP Composite Channels for mm-Wave Low-Noise InP HEMTsDiego C. Ruiz, Tamara Saranovac, Daxin Han, Olivier Ostinelli, Colombo R. Bolognesi. 1-4 [doi]
• A Computationally Efficient Modelling Methodology for Field-Plates in GaN HEMTsJason Hodges, Sayed Ali Albahrani, Sourabh Khandelwal. 1-4 [doi]
• Mathematical foundation for constructing accurate dynamic bipolar transistor compact modelsMichael Schröter, Mario Krattenmacher. 1-4 [doi]
• Over 70-GHz 4.9-Vppdiff InP linear driver for next generation coherent optical communicationsRomain Hersent, Achour Ouslimani, Jean-Yves Dupuy, Agnieszka Konczykowska, Filipe Jorge, Fabrice Blache, Muriel Riet, Virginie Nodjiadjim, Colin Mismer, Abed-Elhak Kasbari. 1-4 [doi]
• Device Architectures for High-speed SiGe HBTsHolger Rücker, Bernd Heinemann. 1-7 [doi]
• TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz rangeSoumya Ranjan Panda, Sébastien Fregonese, Anjan Chakravorty, Thomas Zimmer. 1-4 [doi]
• Thermal analysis of semiconductor devices and materials - Why should I not trust a thermal simulation ?Martin Kuball, James W. Pomeroy, Filip Gucmann, Bahar Oner. 1-5 [doi]
• A 4.6V, 6-bit, 64GS/s Transmitter in 22nm FDSOI CMOSJashva Rafique, The'Linh Nguyen, Sorin P. Voinigescu. 1-4 [doi]
• Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD SimulationTomohiro Otsuka, Yutaro Yamaguchi 0002, Shintaro Shinjo, Toshiyuki Oishi. 1-4 [doi]
• Integrated CMOS-Compatible Mode-Locked Lasers and Their Optoelectronic ApplicationsFranz X. Kärtner, Neetesh Singh. 1-8 [doi]
• DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic TemperaturesHanbin Ying, Jeffrey W. Teng, George N. Tzintzarov, Anup P. Omprakash, Sunil G. Rao, Uppili Raghunathan, Adrian Ildefonso, Martin S. Fernandez, John D. Cressler. 1-4 [doi]
• Application of the Kull epilayer formulation to a compact model for junction diodesAdam W. DiVergilio. 1-4 [doi]
• Feasibility Study of InAlN/GaN HEMT for sub-6 GHz Band ApplicationsKazutaka Inoue, Kenta Sugawara, Ken Kikuchi, Isao Makabe, Hiroshi Yamamoto. 1-4 [doi]
• 8-Watt Linear Three-Stage GaN Doherty Power Amplifier for 28 GHz 5G ApplicationsDavid Wohlert, Bror Peterson, Thi Ri Mya Kywe, Luís Ledezma, Jeff Gengler. 1-4 [doi]
• Measurement based accurate definition of the SOA edges for SiGe HBTsMathieu Jaoul, Didier Celi, Cristell Maneux, Thomas Zimmer. 1-4 [doi]
• A DC-51.5 GHz Electro-Absorption Modulator Driver with Tunable Differential DC Coupling for 3D Wafer Scale PackagingXi Zhang, Xiao Liu, Marc Spiegelberg, Rainier van Dommele, Marion K. Matters-Kammerer. 1-4 [doi]
• Modeling layout, distribution and breakdown effects in GaN HEMTs in the MVSG approachKhandker Akif Aabrar, Lan Wei, Ujwal Radhakrishna. 1-4 [doi]
• A 6-12 GHz Reconfigurable Transformer-Based Outphasing Combiner in 250-nm GaAsDaniel Martin, Michael Roberg, Zoya Popovic, Taylor Barton. 1-4 [doi]
• A 114-126 GHz Frequency Quintupler with >36 dBc Harmonic Rejection in 0.13 μm SiGe BiCMOSAndrea Bilato, Vadim Issakov, Andrea Bevilacqua. 1-4 [doi]
• 25.78-Gbit/s Burst Mode TIA for 50G-EPON OLTKeiji Tanaka, Naruto Tanaka, Shoichi Ogita. 1-4 [doi]
• Probabilistic Computing with Binary Stochastic NeuronsAhmed Zeeshan Pervaiz, Supriyo Datta, Kerem Yunus Camsari. 1-6 [doi]
• Analysis of Horizontal Current Bipolar Transistor (HCBT) Characteristics for RF Power AmplifiersZeljko Osrecki, Josip Zilak, Marko Koricic, Tomislav Suligoj. 1-4 [doi]
• A 60 GS/s 8-b DAC with > 29.5dB SINAD up to Nyquist frequency in 7nm FinFET CMOSYuriy M. Greshishchev, Tingjun Wen, Naim Ben Hamida, Jorge Aguirre, Sadok Aouini, Marinette Besson, Robert Gibbins, Young Gouk Cho, Jerry Lam, Douglas McPherson, Mahdi Parvizi. 1-4 [doi]
• A Broadband Logarithmic Power Detector Using 130 nm SiGe BiCMOS TechnologyYunyi Gong, Seokchul Lee, Hanbin Ying, Anup P. Omprakash, Edward Gebara, Huifang Gu, Charles Nicholls, John D. Cressler. 1-4 [doi]
• Monte Carlo Investigation of Traveling Accumulation Layers in InP Heterojunction Bipolar Transistor Power AmplifiersJonathan P. Sculley, Brian Markman, Utku Soylu, Yihao Fang, Miguel E. Urteaga, Andy D. Carter, Mark J. W. Rodwell, Paul D. Yoder. 1-4 [doi]