Table of Contents

• Al0.87Ga0.13N/Al0.64Ga0.36N HFET with fT >17 GHz and Vbr > 360 VJiahao Chen 0007, Kenneth Stephenson, Md Abdullah Mamun, Zehuan Wang, Parthasarathy Seshadri, Asif Khan, Chirag Gupta. 1-2 [doi]
• Advancing Low-Voltage Complementary Reconfigurable Field-Effect Transistor Operation with Reduced Schottky BarriersJuhan Ahn, Saroj Satapathy, Jaydeep P. Kulkarni. 1-2 [doi]
• A Darlington Transistor Using Cascaded n-p-n Light-Emitting Transistors for Temperature Sensor ApplicationsMukul Kumar, Kuang-Yu Hsueh, Yun-Jie Huang, Chao-Hsin Wu. 1-2 [doi]
• MOSFET Probabilistic-Bit BehaviorLars P. Tatum, Xiangwei Kong, Vladimir Marko Stojanovic, Tsu-Jae King Liu. 1-2 [doi]
• Self-aligned Scaled Planar N-polar GaN HEMTs with Raised RegrowthBoyu Wang, Kamruzzaman Khan, Emre Akso, Henry Collins, Tanmay Chavan, Matthew Guidry, Umesh K. Mishra. 1-2 [doi]
• Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange CouplingMario Bendra, Bernhard Pruckner, R. L. de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov. 1-2 [doi]
• Optimizing TiTe2/Ge4Sb6Te7 Superlattices Towards Low-Power, Fast-Speed, and High-Stability Phase Change MemoryXiangjin Wu, Asir Intisar Khan, H.-S. Philip Wong, Eric Pop. 1-2 [doi]
• Modeling of Content addressable memory using 2D Reconfigurable TransistorsAshwin Tunga, Junzhe Kang, Ziing Zhao, Ankit Shukla, Wenjuan Zhu, Shaloo Rakheja. 1-2 [doi]
• Thermally Activated Fail Bit Counts of Single and Multi-Level NAND flash MemoryDharmendra Kumar Singh, Arjun Shetty, Sandip Mondal. 1-2 [doi]
• Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation SchemesKun Liang, Haochen Zhang, Haiding Sun. 1-2 [doi]
• Monolayer hBN RRAM with High DC Endurance and Low Operation Voltages using an Oxidized Top ElectrodeHui-Ping Chang, Deji Akinwande, Jean Anne C. Incorvia. 1-2 [doi]
• Improved Tunability of BEoL-integrated Hafnium Zirconium Oxide Varactors for mmWave ApplicationsSukhrob Abdulazhanov, Q. H. Le, David Lehninger, Ayse Sünbül, Thomas Kämpfe, G. Gerlach. 1-2 [doi]
• Al-InAs Superconductor-Semiconductor Josephson Junction Parametric AmplifierZ. Hao, T. Shaw, M. Hatefipour, W. Strickland, B. H. Elfeky, D. Langone, J. Shabani, S. Shankar. 1-2 [doi]
• Insights behind multi-level conductance transitions in HfOx memristorsManasa Kaniselvan, Marko Mladenovic, Jente Clarysse, Kevin Portner, Mathieu Luisier. 1-2 [doi]
• Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHzMatthias Sinnwell, Michael Dammann, Rachid Driad, Stefano Leone, Michael Mikulla, Rüdiger Quay. 1-2 [doi]
• Accurate and Compact Small-Signal Modeling of Zinc-Oxide Thin-Film Transistors for Operation in the GHz RegimeYue Ma, Xiaoyang Ma, Sigurd Wagner, Naveen Verma, James C. Sturm. 1-2 [doi]
• Multi-level forming-free HfO2-based ReRAM for energy-efficient computingErbing Hua, Heba Abunahla, Georgi Gaydadjiev, Said Hamdioui, Ryoichi Ishihara. 1-2 [doi]
• Realization and characterization of HZO-based Schottky-Barrier FETs towards Logic-in-Memory applicationsDaniele Nazzari, Lukas Wind, Dominik Mayr, Kihye Kim, Sebastian Lellig, Masiar Sistani, Walter M. Weber. 1-3 [doi]
• Nanoscale MoS2 Transistors on Polyimide for Radio-Frequency OperationEros Reato, P. Palacios, J. A. Yang, S. Wahid, Marc Jaikissoon, J.-S. Ko, Alwin Daus, M. Saeed, Krishna C. Saraswat, Renato Negra, Eric Pop, Max Christian Lemme. 1-2 [doi]
• Understanding and Manipulating Electronic Noise in Electrochemical Random Access Memory for Neuromorphic ComputingSangheon Oh, T. Patrick Xiao, Christopher H. Bennett, Patrick S. Finnegan, Sean R. Bishop, Adam S. Christensen, Adam L. Gross, Sangyong Lee, Andrew Jalbert, Leah Simakas, Joshua D. Sugar, Yiyang Li, Elliot J. Fuller, Sapan Agarwal, A. Alec Talin. 1-2 [doi]
• Demonstration of Record Breakdown up to 13.5 kV in NiO/β-Ga2O3 Vertical RectifiersJian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang, Timothy Jinsoo Yoo, Meng-Hsun Yu, Fan Ren, Honggyu Kim, Yu-Te Liao, Stephen J. Pearton. 1-2 [doi]
• Hybrid FETs Based on Monolayer ZrI2 for Energy-Efficient Logic ApplicationsAteeb Naseer, Keshari Nandan, Amit Agarwal, Somnath Bhowmick, Yogesh S. Chauhan. 1-2 [doi]
• AlN/GaN/AlN HEMTs on Bulk AlN Substrates with High Drain Current Density > 2.8 A/mm and Average Breakdown Field > 2 MV/cmEungkyun Kim, Yu-Hsin Chen, Jimy Encomendero, Debdeep Jena, Huili Grace Xing. 1-2 [doi]
• Boron-Doped Aluminum Nitride Ferroelectric Field-Effect Transistors with ZnO Semiconductor ChannelQuyen Tran, John Hayden, Joseph Casamento, Jon-Paul Maria, Thomas N. Jackson. 1-2 [doi]
• Quantifying Defect-Mediated Electron Capture and Emission in Flexible Monolayer WS2 Field-Effect TransistorsJ. A. Yang, Eros Reato, Theresia Knobloch, J.-S. Ko, Z. Zhang, Andrew J. Mannix, Krishna Saraswat, Tibor Grasser, Max Christian Lemme, Eric Pop. 1-2 [doi]
• CMOS+X Technologies for Neuro-Vector-Symbolic ComputingLuqi Zheng, Haitong Li. 1-2 [doi]
• Oxygen Engineering for Positive Bias Stress Stability of Top-Gated Indium Tin Oxide (ITO) TransistorsSumaiya Wahid, Eric Pop. 1-2 [doi]
• Investigation of Self-Heating in ZnO Thin-Film Transistors by In-Situ Gate Resistance Measurement and Effect on Device Mobility ExtractionNicholas M. Fata, Yue Ma, Sigurd Wagner, Naveen Verma, James C. Sturm. 1-2 [doi]
• A Novel Device Design with Enlarged Storage Region for Retention Enhancement of 1T DRAM CellMd. Hasan Raza Ansari, Nazek El-Atab. 1-2 [doi]
• Compact Modeling of Compound Semiconductor Memory ULTRARAM: A Universal Memory DeviceAbhishek Kumar, Avirup Dasgupta. 1-2 [doi]
• Impact of Multi-Domain Microscopic Interactions on Magnetic Tunnel Junction's Static and Transient CharacteristicsNilesh Pandey, Yogesh S. Chauhan, Leonard F. Register, Sanjay Kumar Banerjee. 1-2 [doi]
• A 0.16-3.7GHz Ultra-Compact Noise-Canceling Cryogenic Low-Noise Amplifier at 4 K using 16nm FinFET Technology for Qubit ReadoutRunzhou Chen, Hamdi Mani, Phil Marsh, Richard Al Hadi, Pragya Shrestha, Jason P. Campbell, Christopher Chen, Hao-Yu Chien, Mau-Chung Frank Chang. 1-2 [doi]
• Analyzing the Dynamics of Store Mechanism and Data Retention through Transient Simulations in Si/Ge TRAM for Cryogenic Memory ApplicationsSaikat Chakraborty, Jaydeep P. Kulkarni. 1-2 [doi]
• Read Noise Analysis in Analog Conductive-Metal-Oxide/HfOx ReRAM DevicesDavide G. F. Lombardo, Mamidala Saketh Ram, Tommaso Stecconi, Wooseok Choi, Antonio La Porta, Donato Francesco Falcone, Bert J. Offrein, Valeria Bragaglia. 1-2 [doi]
• Reduction of Series Resistance in Top-Gate ZnO Thin-Film Transistors by Air Exposure and Oxygen Plasma TreatmentZili Tang, Mohammad Shafiqul Islam, Sigurd Wagner, Naveen Verma, James C. Sturm. 1-2 [doi]
• Polarity Control in Doped Silicon Junctionless Nanowire Transistor for Sensing ApplicationS. Ghosh, A. Echresh, M. B. Khan, D. Bhattacharya, U. Kentsch, Slawomir Prucnal, V. Vardhan, S. Biswas, S. Hellebust, J. Wenger, J. D. Holmes, Artur Erbe, Yordan M. Georgiev. 1-2 [doi]
• Inherent Photogating in MoTe2 Transistors with Van der Waals ContactsAnthony Cabanillas, Hemendra Nath Jaiswal, Anindita Chakravarty, Asma Ahmed, Yu Fu, Chu Te Chen, Fei Yao, Huamin Li. 1-2 [doi]
• Impact of Multi-Domain on Ferroelectric Tunnel Junction Design MetricsNilesh Pandey, Yogesh S. Chauhan, Leonard F. Register, Sanjay Kumar Banerjee. 1-2 [doi]
• Spin-coated ALPO-RRAM with Switching Speed < 50 ns and Nonlinearity 0.5Nitupon Dihingia, Aniket Sadashiva, Debanjan Bhowmik, Sandip Mondal. 1-2 [doi]
• Optimization of Backside of Silicon-Compatible High Voltage Superlattice Capacitor for 12V-to-6V On-Chip Voltage ConversionJunmo Lee, Sunbin Deng, Jungyoun Kwak, Minji Shon, Suman Datta, Shimeng Yu. 1-2 [doi]
• Optimization of Source/Drain-epi Region Height in GAA Nanosheet FET for RF ApplicationsYogendra Machhiwar, Pragya Kushwaha, Harshit Agarwal. 1-2 [doi]
• Device-Aware Quantization in Resistive Random Access Memory-Based Crossbar Arrays to Account for Device Non-IdealitiesJayatika Sakhuja, Sandip Lashkare, Udayan Ganguly. 1-2 [doi]
• Technology Scaling Effects on SRAM Data RemanenceUmeshwarnath Surendranathan, Farzana Hoque, Aleksandar Milenkovic, Biswajit Ray. 1-2 [doi]
• Three-Input Combinational Logic Gates based on Reconfigurable Si Field-Effect TransistorsLukas Wind, A. Fuchsberger, Masiar Sistani, W. M. Weber. 1-2 [doi]
• GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°CShisong Luo, Cheng Chang, Qingyun Xie, Tao Li, Mingfei Xu, Ziyi He, Tomás Palacios, Yuji Zhao. 1-2 [doi]
• NUV-Enhanced 4H-SiC SACM APDsJonathan Schuster, Michael A. Derenge, Jeremy L. Smith, Gregory A. Garrett, Daniel B. Habersat, Brenda VanMil, Dina M. Bower, Shahid Aslam, Tilak Hewagama, Michael Wraback, Anand V. Sampath. 1-2 [doi]
• Ultra Low-Cost Epi-Gd2O3 MOSFET Based Novel 1T Frequency DetectorNishant Saurabh, Paritosh Meihar, Shubham Patil, Udayan Ganguly. 1-2 [doi]
• Double magnetic tunnel junction based ∑Δ∑ hardware neuronFaiyaz E. Mullick, Rahul Sreekumar, Md Golam Morshed, Samiran Ganguly, Mircea Stan, Avik W. Ghosh. 1-2 [doi]
• Improved Mobility Extraction for Transistors with Gated ContactsRobert K. A. Bennett, Lauren Hoang, Connor Cremers, Andrew J. Mannix, Eric Pop. 1-2 [doi]
• Investigation on Positive Bias-Induced Threshold Voltage Instability in GaN-on-Si D-mode Power MIS-HEMTsShivendra K. Rathaur, Abhisek Dixit, Edward Yi Chang. 1-2 [doi]
• Negative Differential Resistance Regime of Field Emitter ArraysY. Shin, W. Chern, N. Karaulac, A. Akinwande. 1-2 [doi]
• FeFET based LIF Neuron with Learnable Threshold and Time ConstantS. Pande, Masud Rana SK, Yannick Raffel, Maximilian Lederer, Konrad Seidel, A. Chakravorty, Sourav De, Bhaswar Chakrabarti. 1-2 [doi]
• P-on-N versus N-on-P Silicon-Avalanche Photodiode Selection for Visible and Near Infrared Wavelength ApplicationsYiyang Bai, Amita Rawat, Lisa N. McPhillips, M. Saif Islam. 1-2 [doi]
• Energy-Efficient Spiking Neural Network Based on Ge4Sb6Te7 Phase-Change Memory SynapsesShafin Bin Hamid, Asir Intisar Khan, Huairuo Zhang, Xiangjin Wu, Albert V. Davydov, Eric Pop. 1-2 [doi]
• Demonstration of an oscillatory neuron using SiOx-based memristive switchesS. Roy, S. Pande, Masud Rana SK, Ela Bhattacharya, Bhaswar Chakrabarti. 1-2 [doi]
• Solution Process Charge Balancing Capacitive DevicesAtul Sachan, Sandip Mondal. 1-2 [doi]
• Bi2Se3/h-BN Heterostructure Rectenna for fast and Sensitive THz DetectionChao Tang, Koichi Tamura, Aoi Hamada, Hiroyoshi Kudo, Shinnosuke Uchigasaki, Yuma Takida, HIroaki Minamide, Tsung-Tse Lin, Akira Satou, Taiichi Otsuji. 1-2 [doi]
• Small Signal Analysis of Nanosheet Transistor for sub-THz Frequency Considering Intersheet Capacitances and Modified Admittance ParametersJyoti Patel, Navjeet Bagga, Vivek Kumar, S. DasGupta. 1-2 [doi]
• Fabrication of Hybrid Fin/Planar LDMOS with Modulation GateZih-Fei Chen, Ya-Chi Huang, Yu-Shen Lai, Yi-Ting Wu, Cheng-Ming Huang, Meng-Hsueh Chiang. 1-2 [doi]
• 3D Finite Thermal Modelling of SrSnO3 Field Effect TransistorsBivek Bista, Jiaxuan Wen, Prafful Golani, Fengdeng Liu, Tristan Truttmann, Bharat Jalan, Steven Koester, Georges Pavlidis. 1-2 [doi]
• Characterizing Probabilistic Bits with Quantum Spin DefectsShiva T. Konakanchi, Pramey Upadhyaya. 1-2 [doi]
• First Experimental Demonstration of Monolithic Bidirectional Switch Using GaN Current Aperture Vertical Electron Transistor (CAVET)X. Wen, H. Kasai, K. Lee, M. Noshin, J. Chun, S. Chowdhury. 1-2 [doi]
• 2.3 kV GaN Super-Heterojunction FET for Cryogenic Power SwitchingMansura Sadek, Jesse T. Kemmerling, Ajay Kumar Visvkarma, Rian Guan, Yixin Xiong, Jianan Song, James Spencer Lundh, Karl D. Hobart, Travis J. Anderson, Rongming Chu. 1-2 [doi]
• The nanopore-FET: a nanofluidic-nanoelectronic silicon-based device for enabling proteomicsAnne S. Verhulst, Aderik Voorspoels, Nihat Akkan, Juliette Gevers, Sybren Santermans, Kherim Willems, Koen M. Martens, Pol Van Dorpe. 1-2 [doi]
• Enhancing Electrostatic Control of High-Speed Liquid-Metal-Printed In2O3 TFTs via Ga DopingSimon A. Agnew, William J. Scheideler. 1-2 [doi]
• Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°CJohn Niroula, Matthew A. Taylor, Qingyun Xie, Pradyot Yadav, Shisong Luo, Yuji Zhao, Tomás Palacios. 1-2 [doi]
• Impact of P-GaN ohmic Contact Resistivity on Switching Time of GaN Super-Heterojunction FETsYuxin Du, Jesse T. Kemmerling, Jianan Song, Keisuke Shinohara, Vivek Mehrotra, Rongming Chu. 1-2 [doi]
• Occurrence and Mitigation of Hot Carrier Degradation in Cryogenic MOSFET OperationShunsuke Shitakata, Hiroshi Oka, Kimihiko Kato, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Takahiro Mori. 1-2 [doi]