Abstract is missing.
- True random number generation exploiting SET voltage variability in resistive RAM memory arraysJérémy Postel-Pellerin, Hussein Bazzi, Hassen Aziza, Pierre Canet, Mathieu Moreau, Vincenzo Della Marca, Adnan Harb. 1-5 [doi]
- Non-filamentary non-volatile memory elements as synapses in neuromorphic systemsAlessandro Fumarola, Yusuf Leblebici, Pritish Narayanan, Robert M. Shelby, L. L. Sanchez, Geoffrey W. Burr, Kibong Moon, J. Jang, Hyunsang Hwang, Severin Sidler. 1-6 [doi]
- Investigating Dynamic Minor Loop of Ferroelectric CapacitorPanni Wang, Zheng Wang, Nujhat Tasneem, Jar Hur, Asif Islam Khan, Shimeng Yu. 1-4 [doi]
- Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND ApplicationsK. Seidel, K. Biedermann, J. Van Houdt, T. Ali, R. Hoffmann, K. Kühnel, M. Czernohorsky, M. Rudolph, B. Pätzold, P. Steinke, K. Zimmermann. 1-4 [doi]
- Functionality Enhanced Memories for Edge-AI Embedded SystemsAlexandre Levisse, Marco Rios, William Andrew Simon, Pierre-Emmanuel Gaillardon, David Atienza. 1-4 [doi]
- Novel Quantum Dot Based Memories with Many Days of Storage Time : Last Steps towards the Holy Grail?Dieter Bimberg, Thomas Mikolajick, X. Wallart. 1-4 [doi]
- Reliability of 3D NAND flash memory with a focus on read voltage calibration from a system aspectNikolaos Papandreou, Nikolas Ioannou, Thomas P. Parnell, Roman A. Pletka, Milos Stanisavljevic, Radu Stoica, Sasa Tomic, Haralampos Pozidis. 1-4 [doi]
- 2 memories: device reliability and depolarization fieldsPatrick D. Lomenzo, Stefan Slesazeck, Michael Hoffmann 0008, Thomas Mikolajick, Uwe Schroeder, Benjamin Max. 1-8 [doi]
- A novel memory test system with an electromagnet for STT-MRAM testingR. Tamura, N. Watanabe, Hiroki Koike, Hideo Sato, Shoji Ikeda, Tetsuo Endoh, Soshi Sato. 1-4 [doi]
- Scalability Study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function MethodFei Mo, Yusaku Tagawa, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi. 1-5 [doi]