Yusuke Higashi, Riichiro Takaishi, Koichi Kato, Masamichi Suzuki, Yasushi Nakasaki, Mitsuhiro Tomita, Yuichiro Mitani, Masuaki Matsumoto, Shohei Ogura, Katsuyuki Fukutani, Kikuo Yamabe. Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface. Microelectronics Reliability, 70:12-21, 2017. [doi]
Abstract is missing.