Exploiting Parasitic Capacitances in 3-D Inductors to Design RF CMOS Quasi-Elliptic-Type Broad-Band Bandpass Filters

Xi Zhu 0001, Roberto Gómez-García. Exploiting Parasitic Capacitances in 3-D Inductors to Design RF CMOS Quasi-Elliptic-Type Broad-Band Bandpass Filters. IEEE Trans. Circuits Syst. II Express Briefs, 68(9):3128-3132, 2021. [doi]

@article{0001G21-0,
  title = {Exploiting Parasitic Capacitances in 3-D Inductors to Design RF CMOS Quasi-Elliptic-Type Broad-Band Bandpass Filters},
  author = {Xi Zhu 0001 and Roberto Gómez-García},
  year = {2021},
  doi = {10.1109/TCSII.2021.3076370},
  url = {https://doi.org/10.1109/TCSII.2021.3076370},
  researchr = {https://researchr.org/publication/0001G21-0},
  cites = {0},
  citedby = {0},
  journal = {IEEE Trans. Circuits Syst. II Express Briefs},
  volume = {68},
  number = {9},
  pages = {3128-3132},
}