A 0.3V 15.6MHz 7T SRAM with Boosted Write and Read Worldlines

Mohammad AL-Fayyad, Khaldoon Abugharbieh. A 0.3V 15.6MHz 7T SRAM with Boosted Write and Read Worldlines. In IEEE Canadian Conference on Electrical and Computer Engineering, CCECE 2020, London, ON, Canada, August 30 - September 2, 2020. pages 1-4, IEEE, 2020. [doi]

@inproceedings{AL-FayyadA20,
  title = {A 0.3V 15.6MHz 7T SRAM with Boosted Write and Read Worldlines},
  author = {Mohammad AL-Fayyad and Khaldoon Abugharbieh},
  year = {2020},
  doi = {10.1109/CCECE47787.2020.9255734},
  url = {https://doi.org/10.1109/CCECE47787.2020.9255734},
  researchr = {https://researchr.org/publication/AL-FayyadA20},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {IEEE Canadian Conference on Electrical and Computer Engineering, CCECE 2020, London, ON, Canada, August 30 - September 2, 2020},
  publisher = {IEEE},
  isbn = {978-1-7281-5442-8},
}