Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour. A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins. IEEE Trans. Circuits Syst. I Regul. Pap., 69(4):1606-1616, 2022. [doi]
@article{AbbasianIG22,
title = {A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins},
author = {Erfan Abbasian and Farzaneh Izadinasab and Morteza Gholipour},
year = {2022},
doi = {10.1109/TCSI.2021.3138849},
url = {https://doi.org/10.1109/TCSI.2021.3138849},
researchr = {https://researchr.org/publication/AbbasianIG22},
cites = {0},
citedby = {0},
journal = {IEEE Trans. Circuits Syst. I Regul. Pap.},
volume = {69},
number = {4},
pages = {1606-1616},
}