Rekib Uddin Ahmed, Prabir Saha. Modeling of Threshold Voltage and Subthreshold Current for P-Channel Symmetric Double-Gate MOSFET in Nanoscale Regime. In IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2017, Bhopal, India, December 18-20, 2017. pages 179-183, IEEE, 2017. [doi]
@inproceedings{AhmedS17-9,
title = {Modeling of Threshold Voltage and Subthreshold Current for P-Channel Symmetric Double-Gate MOSFET in Nanoscale Regime},
author = {Rekib Uddin Ahmed and Prabir Saha},
year = {2017},
doi = {10.1109/iNIS.2017.44},
url = {http://doi.ieeecomputersociety.org/10.1109/iNIS.2017.44},
researchr = {https://researchr.org/publication/AhmedS17-9},
cites = {0},
citedby = {0},
pages = {179-183},
booktitle = {IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2017, Bhopal, India, December 18-20, 2017},
publisher = {IEEE},
isbn = {978-1-5386-1356-6},
}