High-Temperature Empirical Modeling for the I-V Characteristics of GaN150-Based HEMT - researchr publication authors

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Mostafa Amer, Ahmad Hassan, Ahmed Ragab, Soumaya Yacout, Yvon Savaria, Mohamad Sawan. High-Temperature Empirical Modeling for the I-V Characteristics of GaN150-Based HEMT. In IEEE International Symposium on Circuits and Systems, ISCAS 2018, 27-30 May 2018, Florence, Italy. pages 1-5, IEEE, 2018. [doi]

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