Analytical approach of the impact of through silicon via on the performance of MOS devices

Benkechkache Mohamed El Amine, Latreche Saida, Gian-Franco Dalla Betta. Analytical approach of the impact of through silicon via on the performance of MOS devices. In 9th International Design and Test Symposium, IDT 2014, Algeries, Algeria, December 16-18, 2014. pages 242-247, IEEE, 2014. [doi]

References

No references recorded for this publication.

Cited by

No citations of this publication recorded.