Design of 0.35 um CMOS Temperature Sensor for Automatic Refresh Cycle in DRAM Memory Cell

Sehyuk Ann, Junho Yu, Jusang Park, Yongsik Kim, Namsoo Kim. Design of 0.35 um CMOS Temperature Sensor for Automatic Refresh Cycle in DRAM Memory Cell. In 2015 IEEE European Modelling Symposium, EMS 2015, Madrid, Spain, October 6-8, 2015. pages 446-449, IEEE, 2015. [doi]

@inproceedings{AnnYPKK15a,
  title = {Design of 0.35 um CMOS Temperature Sensor for Automatic Refresh Cycle in DRAM Memory Cell},
  author = {Sehyuk Ann and Junho Yu and Jusang Park and Yongsik Kim and Namsoo Kim},
  year = {2015},
  doi = {10.1109/EMS.2015.72},
  url = {http://dx.doi.org/10.1109/EMS.2015.72},
  researchr = {https://researchr.org/publication/AnnYPKK15a},
  cites = {0},
  citedby = {0},
  pages = {446-449},
  booktitle = {2015 IEEE European Modelling Symposium, EMS 2015, Madrid, Spain, October 6-8, 2015},
  publisher = {IEEE},
  isbn = {978-1-5090-0206-1},
}